characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) 050-5624 rev a maximum ratings all ratings: t c = 25 c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/ c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 500 47 0.100 250 1000 100 24 apt5010b2vfr 500 47 188 30 40 520 4.16 -55 to 150 300 4750 2500 apt5010b2vfr 500v 47a 0.100 fredfet g d s fredfet power mos v ? power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? fast recovery body diode ? 100% avalanche tested ? lower leakage ? new t-max ? package (clip-mounted to-247 package) ? faster switching t-max ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com downloaded from: http:///
1 repetitive rating: pulse width limited by maximum junction 4 starting t j = +25 c, l = 2.26mh, r g = 25 , peak i l = 47a temperature. 5 these dimensions are equal to the to-247 without mounting hole 2 pulse test: pulse width < 380 s, duty cycle < 2% 6 i s -i d [cont.], di / dt = 100a/ s, v dd v dss , t j 150 c, r g = 2.0 , 3 see mil-std-750 method 3471 v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. dynamic characteristics 050-5624 rev a z jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 apt5010b2vfr source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 6 reverse recovery time(i s = -i d [cont.], di / dt = 100a/ s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/ s) peak recovery current(i s = -i d [cont.], di / dt = 100a/ s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25 c r g = 0.6 min typ max 7400 8900 1000 1400 380 570 312 470 50 75 127 190 14 30 16 32 54 80 51 0 unit pf nc ns min typ max 47 188 1.3 5 t j = 25 c 250 t j = 125 c 500 t j = 25 c 1.6 t j = 125 c 5.5 t j = 25 c 15 t j = 125 c 27 thermal characteristics symbol r jc r ja min typ max 0.24 40 unit c/w characteristicjunction to case junction to ambient downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 01 0 01 5 02 0 02 5 0 024681 01 2 02468 02 04 06 08 0 1 0 0 1 2 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt5010b2vfr i d = 0.5 i d [cont.] v gs = 10v 100 8060 40 20 0 1.51.4 1.3 1.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 100 8060 40 20 0 100 8060 40 20 0 5040 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 050-5624 rev a v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle 6v 5.5v 5v 4.5v 4v v gs =7v, 8v, 10v & 15v 6v 5.5v 5v 4.5v 4v v gs =15v v gs =10v v gs =20v t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c v gs =7v, 8v & 10v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt5010b2vfr t c =+25 c t j =+150 c single pulse 200100 5010 51 .5.1 2016 12 84 0 050-5624 rev a operation here limited by r ds (on) 10 s 100 s 1ms10ms 100ms dc t j =+150 c t j =+25 c c rss 1 5 10 50 100 500 .01 .1 1 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 c oss c iss 30,00010,000 5,0001,000 500100 200 100 5010 51 v ds =250v v ds =100v v ds =400v i d = i d [cont.] t-max? package outline 5 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate dimensions in millimeters and (inches) drain 2-plcs. apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 downloaded from: http:///
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